Nonvolatile memory device, and its manufacturing method

Details Nonvolatile memory device, and its manufacturing method Nonvolatile memory device, and its manufacturing method

2007-12-11

2007-12-11

Pham, Ly Duy (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185050, C365S185110, C365S185170, C257S315000, C257S316000, C257S324000

Reexamination Certificate

active

11291048

ABSTRACT:
On a channel region enclosed by a pair of diffusion layers13A,13B, a first insulating layer15, a charge accumulative layer17, and a second insulating layer19are stacked up in this order, and on the second insulating layer19, two control gate layers21A,21B spaced across a gap G1are disposed in the middle of the channel width direction. The charge accumulative layer17has discrete charge traps, and, accordingly, movement of charge in the layer is limited. In the charge accumulative layer17, the charges injected depend on the writing voltage applied in control gate layers21A,21B and can be localized beneath the control gate layers21A,21B through which a writing voltage is applied. The presence or absence of charges can be controlled in every charge accumulative region beneath the control gate layers21A,21B, so that multi-value storage in the memory cell can be realized.

REFERENCES:
patent: 4460980 (1984-07-01), Hagiwara et al.
patent: 5498888 (1996-03-01), Ozawa
patent: 6768681 (2004-07-01), Kim
patent: 6803620 (2004-10-01), Moriya et al.
patent: 6885585 (2005-04-01), Maayan et al.
patent: 6903405 (2005-06-01), Takahashi
patent: 6914815 (2005-07-01), Kamei et al.
patent: 6949788 (2005-09-01), Fujiwara et al.
patent: 7075144 (2006-07-01), Kim
patent: 2002/0196665 (2002-12-01), Kim
patent: 2003/0155607 (2003-08-01), Kamigaki et al.
patent: 2004/0196720 (2004-10-01), Hung et al.
patent: 2006/0007732 (2006-01-01), Yeh
patent: 2006/0007735 (2006-01-01), Yeh
patent: 2006/0007741 (2006-01-01), Yeh
patent: 2006/0007742 (2006-01-01), Yeh
patent: 2006/0008983 (2006-01-01), Yeh
patent: 2006/0145243 (2006-07-01), Wong et al.
patent: 54-057875 (1979-05-01), None
patent: 04-253375 (1992-09-01), None
patent: 5-082793 (1993-04-01), None
patent: 06-104447 (1994-04-01), None
patent: 06-275790 (1994-09-01), None
patent: 2000-138300 (2000-05-01), None
patent: 2000-150862 (2000-05-01), None
patent: 2001-024074 (2001-01-01), None
patent: 2001-156275 (2001-06-01), None
patent: 2001-237330 (2001-08-01), None
patent: 2002-050703 (2002-02-01), None
patent: 2002-203918 (2002-07-01), None
patent: 2003-059279 (2003-02-01), None
patent: 2003-176003 (2003-06-01), None
patent: 2003-203998 (2003-07-01), None
patent: 2003-282741 (2003-10-01), None
patent: 2004-327937 (2004-11-01), None

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