Nonvolatile memory device and fabrication method thereof

Details Nonvolatile memory device and fabrication method thereof Nonvolatile memory device and fabrication method thereof

2010-01-20

2010-10-05

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S095000, C257SE21663

Reexamination Certificate

active

07807478

ABSTRACT:
A nonvolatile memory device and its fabrication method of the present invention may ensure a margin of the threshold drive voltage during a design process of the device by forming a resistance layer determining phase of ReRAM along an upper edge of a lower electrode, and improve operating characteristics of the device

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Notification of First Office Action for Chinese Application No. 200710129486.9, dated Mar. 6, 2009.

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