Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Reexamination Certificate
2005-10-04
2005-10-04
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
C438S257000, C438S264000, C438S593000, C438S594000
Reexamination Certificate
active
06951782
ABSTRACT:
In a nonvolatile memory cell having at least two floating gates, each floating gate (160) has an upward protruding portion. This portion can be formed as a spacer over a sidewall of the select gate (140). The spacer can be formed from a layer (160.2) deposited after the layer (160.1) which provides a lower portion of the floating gate. Alternatively, the upward protruding portion and the lower portion can be formed from the same layers or sub-layers all of which are present in both portions. The control gate (170) can be defined without photolithography. Other embodiments are also provided.
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MacPherson Kwok & Chen & Heid LLP
Nguyen Thanh
ProMOS Technologies Inc.
Shenker Michael
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