Nonvolatile memory cell with field-plate switch

Static information storage and retrieval – Magnetic bubbles – Guide structure

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Details

357 41, 365185, 365218, H01L 2968, H01L 2702, G11C 1134

Patent

active

051344491

ABSTRACT:
An array of nonvolatile memory cells are formed at a face of a semiconductor body, the cells including source regions and including drain regions that are part of a common drain column conductor. Each cell has first and second sub-channel regions between source and drain. The conductivity of the first sub-channel regions of each cell is controlled by a field-plate conductor formed over and insulated from the first sub-channel region. The conductivity of each of the second sub-channel regions is controlled by a floating-gate conductor formed over and insulated from the second sub-channel region. A row line, including control gates, is located above and insulated from the floating gates of the cells for reading, programming and erasing the cells. The field-plate conductor switch provides isolation of the cells during programming.

REFERENCES:
patent: 4597000 (1986-06-01), Adam
patent: 4947222 (1990-08-01), Gill et al.
patent: 4989053 (1991-01-01), Shelton

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