Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-08-02
2011-08-02
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S003000, C257S005000, C257SE45002, C257SE45003, C438S102000, C438S103000
Reexamination Certificate
active
07989796
ABSTRACT:
A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and partially fills the opening in the second feature. What is more, a phase change material at least fills a volume between the second feature and the third feature. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.
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Lam Chung Hon
Schrott Alejandro Gabriel
Alexanian Vazken
Bryant Kiesha R
International Business Machines - Corporation
Ryan & Mason & Lewis, LLP
Ward Eric
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