Nonvolatile memory cell programming

Details Nonvolatile memory cell programming Nonvolatile memory cell programming

2005-08-23

2008-03-11

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185260, C365S185190

Reexamination Certificate

active

07342833

ABSTRACT:
A method for programming a non-volatile memory (NVM) cell includes applying an increasing voltage to the current electrode that is used as a source during a read. The initial programming source voltage results in a relatively small number of electrons being injected into the storage layer. Because of the relatively low initial voltage level, the vertical field across the gate dielectric is reduced. The subsequent elevation of the source voltage does not raise the vertical field significantly due to the electrons in the storage layer establishing a field that reduces the vertical field. With less damage to the gate dielectric during programming, the endurance of the NVM cell is improved.

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EP Search Report dated Dec. 19, 2006 from corresponding GB Appln. No. 0616221.8.

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