Nonvolatile memory cell having current compensated for...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S211000

Reexamination Certificate

active

07411830

ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell array, read circuit, program circuit, read voltage generating circuit, memory circuit and switching circuit. The read voltage generating circuit generates and supplies a read voltage to the read circuit. The memory circuit stores information which changes the temperature characteristic of a memory cell in the memory cell array. The switching circuit changes the temperature dependency of read voltage generated from the read voltage generating circuit based on information stored in the memory circuit.

REFERENCES:
patent: 6452437 (2002-09-01), Takeuchi et al.
patent: 2002/0109539 (2002-08-01), Takeuchi et al.
patent: 2002/0159315 (2002-10-01), Noguchi et al.
patent: 2004/0223371 (2004-11-01), Roohparvar
patent: 2005/0157558 (2005-07-01), Noguchi et al.
patent: 2005/0254302 (2005-11-01), Noguchi
patent: 2000-11671 (2000-01-01), None
patent: 2003-217287 (2003-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile memory cell having current compensated for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory cell having current compensated for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory cell having current compensated for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4017755

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.