Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-09-12
2008-08-12
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S211000
Reexamination Certificate
active
07411830
ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell array, read circuit, program circuit, read voltage generating circuit, memory circuit and switching circuit. The read voltage generating circuit generates and supplies a read voltage to the read circuit. The memory circuit stores information which changes the temperature characteristic of a memory cell in the memory cell array. The switching circuit changes the temperature dependency of read voltage generated from the read voltage generating circuit based on information stored in the memory circuit.
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Futatsuyama Takuya
Kawai Koichi
Takeuchi Ken
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tran Michael T
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