Nonvolatile memory cell formed using self aligned source implant

Details Nonvolatile memory cell formed using self aligned source implant Nonvolatile memory cell formed using self aligned source implant

1995-06-07

1996-09-03

Nelms, David C.

Static information storage and retrieval

Floating gate

257314, 257315, H01L 2968

Patent

active

055530184

ABSTRACT:
A memory device, such as a flash EEPROM, employs a high energy implantation to form common source line, avoiding the necessity of self-aligned source etch processes. The use of the high energy implantation, and avoiding the etching process, provides for greater cell uniformity, and better V.sub.T distribution.

REFERENCES:
patent: 4500899 (1985-02-01), Shirai et al.
patent: 5103274 (1992-04-01), Tang et al.
patent: 5394001 (1995-02-01), Yamaguchi et al.

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