Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-02-14
2009-08-25
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002, C257SE45003, C365S046000, C365S148000, C365S186000
Reexamination Certificate
active
07579611
ABSTRACT:
A memory cell for use in integrated circuits comprises a chalcogenide feature and a transition metal oxide feature. Both the chalcogenide feature and transition metal oxide feature each have at least two stable electrical resistance states. At least two bits of data can be concurrently stored in the memory cell by placing the chalcogenide feature into one of its stable electrical resistance states and by placing the transition metal oxide feature into one of its stable electrical resistance states.
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Lam Chung Hon
Meijer Gerhard Ingmar
Schrott Alejandro Gabriel
International Business Machines - Corporation
Menz Douglas M
Ryan & Mason & Lewis, LLP
Such Matthew W
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