Nonvolatile memory cell, array thereof, fabrication methods...

Details Nonvolatile memory cell, array thereof, fabrication methods... Nonvolatile memory cell, array thereof, fabrication methods...

2007-07-13

2009-06-23

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S003000, C257S009000, C257S406000, C257S411000, C257S649000, C257S760000, C438S197000, C438S287000, C977S720000, C977S721000, C977S723000, C977S773000, C977S774000, C977S784000, C977S785000

Reexamination Certificate

active

07550823

ABSTRACT:
A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.

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Notice of Allowance issued by Korean Intellectual Property Office in Korean Patent Application No. 2006-117153 on May 13, 2008.

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