Nonvolatile memory cell

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185100, C365S185140

Reexamination Certificate

active

06992927

ABSTRACT:
An integrated nonvolatile memory circuit having a plurality of control devices. Separate devices execute distinct control, erase, write and read operations, thereby allowing each device to be individually selected and optimized for performing its respective operation.

REFERENCES:
patent: 4228527 (1980-10-01), Gerber et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 5364806 (1994-11-01), Ma et al.
patent: 5686332 (1997-11-01), Hong
patent: 6137723 (2000-10-01), Bergemont et al.
patent: 6324095 (2001-11-01), McPartland et al.
U.S. Appl. No. 10/356,422, filed Jan. 30, 2003.
U.S. Appl. No. 10/895,711, filed Jul. 8, 2004.
U.S. Appl. No. 10/895,713, filed Jul. 8, 2004.
U.S. Appl. No. 10/895,712, filed Jul. 8, 2004.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3526437

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.