Nonvolatile memory apparatus using an ultraviolet impermeable re

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257659, 257643, 365 53, 36518504, H01L 2978

Patent

active

055192467

ABSTRACT:
In a nonvolatile memory apparatus having a special information memory cell, which keeps special information undesirable to be erased at the time of illumination of an ultraviolet ray, in addition to an ultraviolet-erasable memory cell mainframe, an ultraviolet impermeability resin film having an electrically insulating characteristic is provided on the special information memory cell so as to guard the information of the portion, covered by the ultraviolet impermeability resin film, at the time of the illumination of an ultraviolet ray. Since the ultraviolet impermeability resin film has an electrically insulating characteristic, it is possible to widely cover the special information memory cell to prevent the ultraviolet ray from passing around the ultraviolet impermeability resin film without a restriction on a wiring pattern formation, thereby improving the reliability.

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"Understanding IC Lithography," David H. Ziger, IEEE Circuits and Devices Magazine, IEEE, Sep. 1992.
"Advanced `Contact Engineering` for Submicron VLSI Multilevel Metallization," K. Konrad Young, et al., IEEE Transactions on Semiconductor Manufacturing, vol. 6, No. 1, Feb. 1993.

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