Static information storage and retrieval – Floating gate
Reexamination Certificate
2003-05-15
2008-03-04
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
C365S185050, C365S185110, C365S185180
Reexamination Certificate
active
07339820
ABSTRACT:
A nonvolatile memory capable of acting at each 1 bit and having a high integration density. A small-sized semiconductor device of multiple high functions having such nonvolatile memory.The nonvolatile memory is constructed to have a memory cell composed of two memory transistors so that it can realize a memory capacity of two times as large for a memory area as that of the full-function EEPROM of the prior art, in which the memory cell is composed of one memory transistor and one selection transistor, while retaining functions similar to those of the EEPROM. On the other hand, the small-sized semiconductor device of high functions or multiple functions is realized by forming the nonvolatile memory of the invention integrally with another semiconductor part over a substrate having an insulating surface.
REFERENCES:
patent: 4847211 (1989-07-01), Lee
patent: 5648930 (1997-07-01), Randazzo
patent: 5740106 (1998-04-01), Nazarian
patent: 5793344 (1998-08-01), Koyama
patent: 5812450 (1998-09-01), Sansbury et al.
patent: 5888868 (1999-03-01), Yamazaki et al.
patent: 6054734 (2000-04-01), Aozasa et al.
patent: 6157575 (2000-12-01), Choi
patent: 6169307 (2001-01-01), Takahashi et al.
patent: 6198125 (2001-03-01), Yamazaki et al.
patent: 6272044 (2001-08-01), Yamamoto et al.
patent: 6472684 (2002-10-01), Yamazaki et al.
patent: 6667494 (2003-12-01), Yamazaki et al.
patent: 2007/0127290 (2007-06-01), Kato
patent: 10-247735 (1998-09-01), None
patent: 11-156696 (1999-06-01), None
Johnson, et al., “A 16Kb Electrically Erasable Nonvolatile Memory”, Nonvolatile Semiconductor Memories, IEEE ISSCC Dig. Tech. Pap., pp. 152-153, 271, 1980.
Dinh Son
Fish & Richardson P.C.
LandOfFree
Nonvolatile memory and semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile memory and semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory and semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3975998