Nonvolatile memory and fabrication method thereof

Details Nonvolatile memory and fabrication method thereof Nonvolatile memory and fabrication method thereof

2007-03-20

2010-12-14

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S004000, C257S190000, C257S154000, C257S536000, C257SE29141, C257SE45003, C257SE45001

Reexamination Certificate

active

07851888

ABSTRACT:
Non-volatile memories formed on a substrate and fabrication methods are disclosed. A bottom electrode comprising a metal layer is disposed on the substrate. A buffer layer comprising a LaNiO3film is disposed over the metal layer. A resistor layer comprising a SrZrO3film is disposed on the buffer layer. A top electrode is disposed on the resistor layer.

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