Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

1997-04-11

1999-04-20

Hoang, Huan

Static information storage and retrieval

Floating gate

36518518, 36518528, 3652256, 257315, 257321, G11C 1604

Patent

active

058963154

ABSTRACT:
A nonvolatile memory cell is formed in an embedded P-well without the necessity of including an overlaying control gate. As a result, normal logic process technology may be utilized to form the nonvolatile memory cell. Through the use of substrate hot electron injection and the formation of a lateral bipolar transistor whose emitter acts as a charge injector, programming efficiency is improved and the necessary programming voltages and currents can be reduced from the relatively high voltages and currents used in other devices.

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