Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

1998-06-11

1999-02-16

Hoang, Huan

Static information storage and retrieval

Floating gate

Particular biasing

36518527, 36518528, 3652256, G11C 1604

Patent

active

058727329

ABSTRACT:
A nonvolatile memory cell is formed in an embedded P-well without the necessity of including an overlaying control gate. As a result, normal logic process technology may be utilized to form the nonvolatile memory cell. Through the use of substrate hot electron injection and the formation of a lateral bipolar transistor whose emitter acts as a charge injector, programming efficiency is improved and the necessary programming voltages and currents can be reduced from the relatively high voltages and currents used in other devices.

REFERENCES:
patent: 5301150 (1994-04-01), Sullivan et al.
patent: 5371703 (1994-12-01), Miyamoto
patent: 5457652 (1995-10-01), Brahmbhatt
patent: 5504706 (1996-04-01), D'Arrigo et al.
patent: 5617352 (1997-04-01), Shoemaker
patent: 5629891 (1997-05-01), LeMoncheck et al.
patent: 5761121 (1998-06-01), Chang

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