Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

2005-11-08

2005-11-08

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185040, C365S185330

Reexamination Certificate

active

06963501

ABSTRACT:
An aspect of the present invention provides a nonvolatile memory that includes a memory cell array including a data storage area to store a data, and a data invert flag storage area to store a data invert flag indicating whether or not the data is inverted. The memory cell array outputs selected data and a data invert flag related to the selected data. A state machine determines whether or not the number of memory cells to which a bias voltage is applied is equal to or greater than a predetermined number when writing data into the memory cell array. The state machine instructs a data controller to transfer inverted data and a data invert flag if it is equal to or greater than the predetermined number.

REFERENCES:
patent: 6198657 (2001-03-01), Uekubo et al.
patent: 6240019 (2001-05-01), Shiga et al.
patent: 6381175 (2002-04-01), Pitts
patent: 6434080 (2002-08-01), Shiga
patent: 6700820 (2004-03-01), Elmhurst et al.
patent: 6807095 (2004-10-01), Chen et al.
patent: 8-45275 (1996-02-01), None
patent: 2000-243095 (2000-09-01), None
patent: 2001-135086 (2001-05-01), None

Affiliated with

Also associated with

Rating

Nonvolatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3463823