Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

2005-01-18

2005-01-18

Ho, Hoai V. (Department: 2818)

Static information storage and retrieval

Floating gate

Data security

C365S185180, C365S185290

Reexamination Certificate

active

06845040

ABSTRACT:
A nonvolatile memory in which a rewrite disabled region may be set freely operates whereby an address signal is decoded by a row decoder, a selected word line is set at “H”, and this is transmitted to a high voltage application decoder. Information indicating whether the rewriting of a memory cell in a memory cell array is permitted or prohibited is set in a disablement information setting portion, and security signals are outputted for word line units. When a word line for which rewriting is permitted is selected, a latch inside the high voltage application decoder is set, and a high voltage for rewriting is outputted to the corresponding word line at the next rewrite timing. For word lines in which rewriting is prohibited, the latch is not set and the high voltage for rewriting is not outputted to the word lines.

REFERENCES:
patent: 5576987 (1996-11-01), Ihara et al.
patent: 6651149 (2003-11-01), Iwasaki
patent: 64-043897 (1989-02-01), None
patent: 10-188577 (1998-07-01), None

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