Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

2008-07-01

2008-07-01

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S200000, C365S230030

Reexamination Certificate

active

07394688

ABSTRACT:
The memory device according to an embodiment of the invention prepares a reference field (reference value range) corresponding to each logical value and if the threshold value of the cell is within that field, the cell is determined to be defective and the data of the defective cell is stored in a redundant cell. Therefore, if the threshold value drops because the cell charge leaks over time, the data which is stored can be rescued. As a background operation of a normal operating, memory device performs the memory cell check and memory cell substitution in accordance with the internal addresses generated independently than external addresses. Therefore, a defective cell can be rescued without causing delay in the normal operations of memory device.

REFERENCES:
patent: 5359570 (1994-10-01), Hsu et al.
patent: 5377147 (1994-12-01), Merchant et al.
patent: 6144592 (2000-11-01), Kanda
patent: 6556479 (2003-04-01), Makuta et al.
patent: 6728133 (2004-04-01), Shimizu
patent: 6728910 (2004-04-01), Huang
patent: 2003/0086319 (2003-05-01), Fujimoto et al.
patent: 2004/0237023 (2004-11-01), Takahashi et al.
patent: 09-320289 (1997-12-01), None

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