Nonvolatile magnetic memory device and manufacturing method...

Details Nonvolatile magnetic memory device and manufacturing method... Nonvolatile magnetic memory device and manufacturing method...

2007-09-18

2007-09-18

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S414000, C257S421000, C257SE21665, C257S296000, C365S171000, C365S184000

Reexamination Certificate

active

11237138

ABSTRACT:
An TMR-type MRAM comprising a transistor for selection; a first connecting hole; a first wiring (write-in word line); a second insulating interlayer covering a first insulating interlayer and the first wiring; a TRM device formed on the second insulating interlayer; a second wiring (bit line) formed on a third insulating interlayer; and a second connecting hole formed through the second insulating interlayer and connected to the first connecting hole, in which an end face of an extending portion of the other end of the TRM device is in contact with the second connecting hole.

REFERENCES:
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6587370 (2003-07-01), Hirai
patent: 6664579 (2003-12-01), Kim et al.
patent: 6849888 (2005-02-01), Ooishi
patent: 2002/0034094 (2002-03-01), Saito et al.
patent: 2002/0175386 (2002-11-01), Kim et al.
patent: 2003/0117835 (2003-06-01), Kim et al.
patent: 2004/0175596 (2004-09-01), Inomata et al.
patent: 2004/0257719 (2004-12-01), Ohba et al.
patent: 2000-294743 (2000-10-01), None
patent: 2001-298161 (2001-10-01), None
patent: 2002-334574 (2002-11-01), None
Japanese Office Action issued on Oct. 3, 2006.

Affiliated with

Also associated with

Rating

Nonvolatile magnetic memory device and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile magnetic memory device and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile magnetic memory device and manufacturing method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3747638