Nonvolatile flash memory and method of operating the same

Details Nonvolatile flash memory and method of operating the same Nonvolatile flash memory and method of operating the same

2006-08-29

2006-08-29

Mai, Son (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185280, C365S185290, C365S185330, C257S316000, C257S318000

Reexamination Certificate

active

07099192

ABSTRACT:
A nonvolatile memory and a method of operating the same are proposed. The nonvolatile memory has single-gate memory cells, wherein a structure of a transistor and a capacitor is embedded in a semiconductor substrate. The transistor comprises a first conducting gate stacked on the surface of a dielectric with doped regions formed at two sides thereof as a source and a drain. The capacitor comprises a doped region, a dielectric stacked thereon, and a second conducting gate. The conducting gates of the capacitor and the transistor are electrically connected together to form a single floating gate of the memory cell. The semiconductor substrate is p-type or n-type. Besides, a back-bias program write-in and related erase and readout operation ways are proposed for the single-gate memory cells.

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