Nonvolatile ferroelectric memory device with split word lines

Details Nonvolatile ferroelectric memory device with split word lines Nonvolatile ferroelectric memory device with split word lines

2005-08-02

2005-08-02

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

C365S230030, C365S145000

Reexamination Certificate

active

06925030

ABSTRACT:
The present invention relates to a memory device; and, more particularly, to a cell array of a nonvolatile ferroelectric memory device and an apparatus and a method for driving such a cell array. The nonvolatile ferroelectric memory device according to the present invention includes: a cell array region having first and second cell array blocks which are adjacent to each other and independently operate; a first drive region being adjacent to the first cell array block in the cell array region in order to drive first split words line which operate as plate lines of the first cell array block and word lines of the second cell array block; and a second drive region being adjacent to the second cell array block in the cell array region in order to drive first split word lines which operate as plate lines of the second cell array block and word lines of the first cell array block, wherein each of the first and second drive regions includes a plurality of split word line drivers and wherein each of the split word line drivers is connected to the plate lines of the first and second cell array blocks correspondent thereto.

REFERENCES:
patent: 6091624 (2000-07-01), Kang
patent: 6240007 (2001-05-01), Kang
2002 IEEE International Solid-State Circuits Conference; Visuals Supplement; Feb. 2002.

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