Nonvolatile ferroelectric memory device

Details Nonvolatile ferroelectric memory device Nonvolatile ferroelectric memory device

2007-09-25

2007-09-25

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S145000, C365S147000

Reexamination Certificate

active

11115302

ABSTRACT:
A nonvolatile ferroelectric memory device is provided so as to control read/write operations of a nonvolatile memory cell using a channel resistance of the memory cell which is differentiated by polarity states of a ferroelectric material. In the memory device, an insulating layer is formed on a bottom word line, and a floating channel layer comprising a P-type drain region, a P-type channel region and a P-type source region is formed on the insulating layer. Then, a ferroelectric layer is formed on the floating channel layer, and a word line is formed on the ferroelectric layer. As a result, the resistance state induced to the channel region is controlled depending on the polarity of the ferroelectric layer, thereby regulating the read/write operations of the memory cell array.

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