Nonvolatile ferroelectric memory and control device using...

Details Nonvolatile ferroelectric memory and control device using... Nonvolatile ferroelectric memory and control device using...

2006-06-06

2006-06-06

Elms, Richard (Department: 2824)

Static information storage and retrieval

Addressing

Byte or page addressing

C365S145000, C365S230030, C365S233500, C711S209000

Reexamination Certificate

active

07057970

ABSTRACT:
A nonvolatile ferroelectric memory immediately outputs data stored in a page buffer without performing a cell access operation when a page buffer is accessed. Since a block page address region and a column page address region are arranged in less significant bit region, and a row address region is arranged in more significant bit region, the cell operation is not performed in the access of the page address buffer, thereby improving reliability of the cell and reducing power consumption.

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patent: 1020040059009 (2004-07-01), None

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