Nonvolatile content addressable memory

Static information storage and retrieval – Associative memories – Ferroelectric cell

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365145, G11C 1500

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active

058089292

ABSTRACT:
Binary and multiple-valued nonvolatile content addressable memories (NVCAMs) use ferroelectric capacitors as nonvolatile storage elements. The operation of the NVCAMs is accessed either in serial or in parallel. In a 2-bit NVCAM of a parallel access structure, search operation is performed by a simultaneous access a 4-level polarization of the ferroelectric capacitor. The total number of search operations is reduced.

REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4910708 (1990-03-01), Eaton, Jr. et al.
patent: 5130945 (1992-07-01), Hamamoto
patent: 5291436 (1994-03-01), Kamisawa
patent: 5455784 (1995-10-01), Yamada
patent: 5515320 (1996-05-01), Miwa
T. Hanyu et al. entitled "Functionally Separated, Multiple-Valued Content-addressable Memory and its Applications", IEEE Proc.-Circuits Devices Syst., vol. 142, No. 3, pp. 165-172, Jun. 1995.
K. Schultz et al. entitled "Architectures for Large-Capacity CAMs", INTEGRATION: the VLSI Journal, vol. 18, pp. 151-171, 1995.
J.P. Wade et al. entitled "A Ternary Content Addressable Search Engine", IEEE Journal of Solid-State Circuits, vol. 24, No. 4, Aug. 1989, pp. 1003-1013.
M. Hariyama et al, entitled "A Collision Detection Processor for Intelligent Vehicles", IEICE Trans. Electron, vol. E76-C, No. 12, pp. 1804-1811, Dec. 1993.
S. W. Wood, Ferroelectric Memory Design, University of Toronto, 1991, pp. 65-67.
A. Sheikholeslami et al. "A Multiple-Valued Ferroelectric Content-Addressable Memory", ISMVL Conference Proceesings, May 1996.

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