Static information storage and retrieval – Associative memories – Ferroelectric cell
Patent
1990-01-08
1991-12-03
Bowler, Alyssa H.
Static information storage and retrieval
Associative memories
Ferroelectric cell
365185, 365 63, 365168, G11C 700, G11C 1500, G11C 1600
Patent
active
050704800
ABSTRACT:
An associative memory system and system comprising an M by N array of memory cells forming M words of N trit length are disclosed having single word alterability. Each memory cell further comprises first and second nonvolatile storage devices without the need for additional switching devices. Generally, complementary data is stored in the two storage devices and the cell is interrogated by applying complementary data to the storage devices. A match or mismatch is achieved by looking for current through either of the storage devices. Preferably, the storage devices are one of two types of flash EEPROM transistors, or a SONOS transistor. Each transistor has a gate, drain and source and has write and rewrite capabilities that allows single word alterability in the memory array to be accomplished by applying a high voltage to the transistor drain, or by applying a combination of voltages to the drain and gate.
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