Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-08-08
2010-12-07
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE33033, C438S027000
Reexamination Certificate
active
07847280
ABSTRACT:
A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.
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Iso Kenji
Nakamura Shuji
Yamada Hisashi
Dickey Thomas L
Gates & Cooper LLP
The Regents of the University of California
Yushin Nikolay
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