Nonplanar substrate injection lasers grown in vapor phase epitax

Details Nonplanar substrate injection lasers grown in vapor phase epitax Nonplanar substrate injection lasers grown in vapor phase epitax

1981-05-29

1984-02-21

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

044334176

ABSTRACT:
In a semiconductor injection laser with a nonplanar pattern in the substrate, growth of the plurality of layers comprising the laser structure is accomplished in vapor phase epitaxy to produce a lateral spatial thickness variation (LSTV) in the active region of the laser. The LSTV profile is one of or combination of the profiles disclosed in FIG. 2, producing an effective, although small, lateral refractive index variation in the active region, thereby permitting the maintenance of the lowest order transverse mode along the plane of the active region.

REFERENCES:
patent: 3978428 (1976-08-01), Burnham et al.
patent: 4215319 (1980-07-01), Botez
DuPuis: "Ga.sub.1-x Al.sub.x As-GaAs Heterostructure Lasers Grown by MO-CVD", JJAP, vol. 19(19-1), pp. 415-423, 1980.

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