Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2010-11-24
2011-11-29
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C257SE29259
Reexamination Certificate
active
08067818
ABSTRACT:
A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top surface is greater than at the bottom surface. A gate dielectric layer is formed on the top surface of the semiconductor body and on the sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body. A pair of source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode.
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Brask Justin K.
Chau Robert S.
Doyle Brian
Letson Thomas A.
Shah Uday
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Movva Amar
Smith Bradley K
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