Nonplanar device with thinned lower body portion and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor

Reexamination Certificate

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C257SE29259

Reexamination Certificate

active

08067818

ABSTRACT:
A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top surface is greater than at the bottom surface. A gate dielectric layer is formed on the top surface of the semiconductor body and on the sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body. A pair of source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode.

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