Nonmonolithic array structure of multiple beam diode lasers

Details Nonmonolithic array structure of multiple beam diode lasers Nonmonolithic array structure of multiple beam diode lasers

1993-12-29

1995-03-28

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 23, 372 24, 372 36, 372 97, 372 11, 347238, H01S 319

Patent

active

054024366

ABSTRACT:
A single semiconductor diode laser array with multiple laser beams is used in a laser printer. The single diode laser array is formed by joining two semiconductor diode lasers. Each diode laser emits multiple laser beams that can have a different wavelength than the multiple laser beams of the other diode laser. The diode lasers can be made from different materials, such as GaAs/AlGaAs and GaInP/AlGaInP. The polarization of one diode laser can be orthogonal to the polarization of the other diode laser. The first diode laser has the dimensions of a long width and a short length. The second diode laser has the dimensions of a short width and a long length. The lasing elements are formed centrally to the width of each diode laser. The diode lasers are mounted on separate heatsink mounts. When the diode laser array is assembled, an insulator separates the lasing elements of each diode laser. Contact wires are attached to bonding pads located near the exposed ends or sides of each diode laser.

REFERENCES:
patent: 4253102 (1981-02-01), Kataoka et al.
patent: 4870652 (1989-09-01), Thornton
patent: 4901325 (1990-02-01), Kato et al.
patent: 5243359 (1993-09-01), Fisli
patent: 5305344 (1994-04-01), Patel
patent: 5325381 (1994-06-01), Paoli

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