Nonlithographic method of defining geometries for plasma...

Details Nonlithographic method of defining geometries for plasma... Nonlithographic method of defining geometries for plasma...

2007-10-30

2007-10-30

Vinh, Lan (Department: 1765)

Electrical connectors

With insulation other than conductor sheath

Metallic connector or contact secured to insulation

C438S706000, C438S710000, C430S312000

Reexamination Certificate

active

11089942

ABSTRACT:
A method for defining geometries in a semiconductor wafer supported on a plate electrode in a processing chamber includes forming a reusable refractory coated laminar mask. The reusable refractory coated laminar mask is formed by defining the geometries in a laminar mask substrate, forming apertures through the laminar mask substrate, and forming a layer of refractory material over at least one surface of the laminar mask substrate. The reusable refractory coated laminar mask is positioned over the semiconductor wafer. Treating of the semiconductor wafer is performed through the apertures of the reusable refractory coated laminar mask. The treating may be plasma etching or ion etching.

REFERENCES:
patent: 3971684 (1976-07-01), Muto
patent: 4448865 (1984-05-01), Bohlen et al.
patent: 4661203 (1987-04-01), Smith et al.
patent: 6924493 (2005-08-01), Leung
patent: 2002/0058400 (2002-05-01), Suguro et al.
patent: 02/14951 (2002-02-01), None
Weidenmuller et al., Heavy Ion Projection Beam System for Material Modification at High Ion Energy, Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures) AIP for American Vacuum SOC USA, vol. 20, No. 1, Jan. 2002, pp. 246-249.
Ruchhoeft et al., Fabrication of Silicon Stencil Masks with Vitreous Carbon Ion-Absorbing Coatings, Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, New York, NY, US, vol. 16, No. 6, Nov. 1998, pp. 3599-3601.
Shibata et al., Litography-Less Ion Implantation Technology for Agile FAB, 2001 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (ISSM 2001) San Jose, CA, Oct. 8-10, 2001, pp. 113-116.

Affiliated with

Also associated with

Rating

Nonlithographic method of defining geometries for plasma... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonlithographic method of defining geometries for plasma..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonlithographic method of defining geometries for plasma... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3902809