Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-05-05
2008-11-11
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S536000, C257S358000, C438S382000
Reexamination Certificate
active
07449783
ABSTRACT:
A thin film resistor structure includes a plurality of thin film resistor sections. Conductive vias (5) are disposed on a first end of each of the thin film resistor sections, respectively. The first conductor (2) is connected to the vias of the first end, and a second conductor (3) is connected to vias on a second end of each of the thin film resistor sections. A distribution of a parameter of a batch of circuits including the thin film resistor structure indicates a systematic error in resistance values. Based on analysis of the distribution and the circuit, or more of the vias are individually moved at the layout grid level by a layout grid address unit to reduce the systematic error by making corresponding adjustments on a via reticle of a mask set used for making the circuits. Expensive laser trimming of thin film resistors of the circuit is thereby avoided.
REFERENCES:
patent: 6150971 (2000-11-01), Naylor et al.
patent: 7202533 (2007-04-01), Beach et al.
patent: 7335967 (2008-02-01), Watanabe
patent: 7345573 (2008-03-01), Beach
Beach Eric W.
Meinel Walter B.
Naylor Jimmy R.
Brady III Wade J.
Menz Douglas M
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Thach Tum
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