Nonlinear resistance element suitable for an active-type liquid

Details Nonlinear resistance element suitable for an active-type liquid Nonlinear resistance element suitable for an active-type liquid

1989-09-27

1991-10-01

Mintel, William

Optical: systems and elements

Prism

With reflecting surface

357 51, 357 4, 357 59, 359 60, H01L 4500

Patent

active

050538322

ABSTRACT:
A nonlinear diode having a first electrode, a second electrode, and a nonlinear resistance film of hydrogenated amorphous silicon nitride formed between the first and second electrodes and having an optical bandgap ranging between 2.0 and 2.2 eV. The nonlinear diode further comprises an additional hydrogenated amorphous silicon nitride film between the nonlinear resistance film and the second electrode. The additional hydrogenated amorphous silicon nitride film has an optical bandgap greater than that of the hydrogenated amorphous silicon nitride in said nonlinear film. A nonlinear diode according to the present invention may also comprise first and second electrodes and an amorphous film formed between the first and second electrodes. The amorphous film includes a first hydrogenated amorphous silicon nitride film and a second hydrogenated amorphous silicon nitride film. The first hydrogenated amorphous silicon nitride film has an optical bandgap ranging from 2.0 to 2.2 eV and the second hydrogenated amorphous silicon nitride film has an optical bandgap greater than that of the first hydrogenated amorphous silicon nitride film.

REFERENCES:
patent: 4490453 (1984-12-01), Shirai et al.
patent: 4737429 (1988-04-01), Mort et al.
patent: 4871234 (1989-10-01), Suzuki
Toyama et al., "A Large-Area Diode-Matrix LCD SiNx Layer", 1987, pp. 155-158, SID 87 Digest, Society for Information Display International Symposium, Digest of Technical Papers, vol. XVIII, May 12, 1987, New Orleans, La., USA.

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