Nonlinear optical materials and their manufacturing method

Details Nonlinear optical materials and their manufacturing method Nonlinear optical materials and their manufacturing method

1994-08-11

1995-10-03

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 64, 257 65, H01L 4500, H01L 2904

Patent

active

054554314

ABSTRACT:
This invention is directed to new non-linear optical materials and methods for manufacturing these materials. A new materials are non-oxide amorphous thin films which are doped with semiconductor microcrystallites. The use of non-oxide materials as the amorphous thin film prevents the occurrence of undesirable chemical reactions, such as the oxidation of the semiconductor microcrystallites doped therein. The disclosed materials may be manufactured by simultaneously sputtering a target of the selected semiconductor material and a target of the non-oxide amorphous material. Alternatively, reactive sputtering in a non-oxide gas environment may be utilized to deposit the non-oxide amorphous material doped with semiconductor microcrystallites.

REFERENCES:
patent: 4957604 (1990-09-01), Steininger
patent: 5017308 (1991-05-01), Iijima et al.
patent: 5021103 (1991-06-01), Hamakawa et al.
patent: 5103284 (1992-04-01), Ovshinsky et al.

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