Nonlinear optical materials and their manufacturing method

Details Nonlinear optical materials and their manufacturing method Nonlinear optical materials and their manufacturing method

1994-10-31

1995-11-07

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 55, 257 63, 257103, 257607, H01L 2904

Patent

active

054649919

ABSTRACT:
Non-linear optical materials are formed from amorphous thin films having semiconductor microcrystallites dispersed therein. Amorphous thin films of nitrides or carbides are selected that have a larger bandgap than the bandgap of the semiconductor materials which form the dispersed microcrystallites in order to prevent the surfaces of the microcrystallites from undergoing chemical reactions such as oxidation and the like. The non-linear optical materials are prepared by a sputtering method in which a target formed from the semiconductor material and a separate target formed from the nitrides or carbides are sputtered to produce the non-linear optical material.

REFERENCES:
patent: 4478654 (1984-10-01), Gau et al.
patent: 4957604 (1990-09-01), Steininger
patent: 5017308 (1991-05-01), Iijima et al.
patent: 5021103 (1991-06-01), Hamakawa et al.
patent: 5103284 (1992-04-01), Ovshinsky et al.

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