Nonlinear optical device

Coherent light generators – Particular active media – Semiconductor

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372 44, 372 50, H01S 319

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active

053596170

ABSTRACT:
A multi-quantum well structure with a large second order optical nonlinearity and transparent at short wavelengths of up to 350 nm. is described. Alternating insulator and semiconductor layers are grown on a substrate to form a multi-quantum well structure, such that the potential function for electrons in the semiconductor layers is asymmetric in a direction normal to the substrate. Sub-bands of electrons in the conduction band lead to a large optical nonlinearity with efficient second harmonics generation, and is obtained by an appropriate selection of the width and shape of the well. The structure, preferably packaged on the same substrate of a laser diode, is used as an on-chip source of blue light.

REFERENCES:
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E. Rosencher, et al., "Second Harmonic Generation by Intersub-Band Transtions in Compositionally Asymmetrical MQWs", Electronics Letters, vol. 25, No. 16, Aug. 3, 1989, pp. 1063-1065.
M. M. Fejer, et al., "Observation of Extremely Large Quadratic Susceptibility at 9.6-10.8 .mu.m in Electric-Field-Biased AlGaAs Quantum Amer. Physical Society", vol. 62, No. 9, pp. 1041-1044, Feb. 1989.
T. Yokogawa, et al., "Optical Characterization of ZnSe/ZnS Strained-Layer Superlattices Grown on CaF.sub.2 Substrates" Appl. Phys. Lett., vol. 58 (16) Apr. 22, 1991, pp. 1754-1756.

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