Static information storage and retrieval – Radiant energy – Semiconductive
Reexamination Certificate
2008-04-17
2010-10-26
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Radiant energy
Semiconductive
C365S109000, C365S110000, C365S112000, C365S175000, C257S015000, C257S022000, C257S097000, C257S103000, C257S184000, C438S036000, C438S047000, C438S095000, C438S191000, C438S312000
Reexamination Certificate
active
07821807
ABSTRACT:
A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. An extraction region is disposed on a first side of the active region and extracts minority carriers from the active region. It also has majority carriers within the extraction region flowing toward the active region in a condition of reverse bias. An exclusion region is disposed on a second side of the active region and has minority carriers within the exclusion region flowing toward the active region. It receives majority carriers from the active region. At least one of the extraction and exclusion region provides a barrier for substantially reducing flow of one of the majority carriers or the minority carriers, whichever is flowing toward the active region, while permitting flow of the other minority carriers or majority carriers flowing out of the active region. The barrier substantially reduces flow of the carriers without relying on diffusion length of the one carriers in order to reduce the flow.
REFERENCES:
patent: 4972245 (1990-11-01), Yamaka et al.
patent: 5016073 (1991-05-01), Elliott et al.
patent: 6049116 (2000-04-01), Park et al.
patent: 6081019 (2000-06-01), White
patent: 6906358 (2005-06-01), Grein et al.
Velicu et al., “HgCdTe/CdTe/Si infared photodetectors grown by MBE for near-room temperature operation”, J. of Electron. Mater., vol. 30, No. 6, p. 711-716 (Jun. 2001).
Johnson et al., “Electronic and optical properties of III-V and II-VI semiconductor superlattices”, Physical Review B, vol. 41, No. 6, p. 3655-3669 (Feb. 15, 1990).
Bratt et al., “Potential barriers in HgCdTe heterojunctions”, J. Vac. Sci. Technol. A3 (1), p. 238-245 (Jan./Feb. 1985).
Hansen et al., “Energy gap versus alloy composition and temperature in Hg1-xCdxTea)”, J. of Appl. Phys., vol. 53, No. 10, p. 7099-7101 (Oct. 1982).
Grein Christoph H.
Sivananthan Sivalingam
Velicu Silviu
EPIR Technologies, Inc.
Momkus McCluskey, LLC
Perkins Jefferson
Pham Ly D
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