Nonequilibrium photodetector with superlattice exclusion layer

Details Nonequilibrium photodetector with superlattice exclusion layer Nonequilibrium photodetector with superlattice exclusion layer

2005-06-14

2005-06-14

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S012000, C257S015000, C257S022000, C257S096000, C257S097000, C257S103000, C257S188000

Reexamination Certificate

active

06906358

ABSTRACT:
A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. At least one extraction region is disposed on a first side of the active region and has a majority carrier of the second conductivity type. Carriers of the second conductivity type are extracted from the active region and into the extraction region under a condition of reverse bias. At least one exclusion region is disposed on a second side of the active region and has a majority carrier of the first conductivity type. The exclusion region prevents entry of its minority carriers, which are of the second conductivity type, into the active region while in a condition of reverse bias. The exclusion region includes a superlattice with a plurality of layers.

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