Nondestructive method for profiling imperfection levels in high

Details Nondestructive method for profiling imperfection levels in high Nondestructive method for profiling imperfection levels in high

1984-04-23

1986-04-08

Eisenzopf, Reinhard J.

Electricity: measuring and testing

Conductor identification or location

Inaccessible

324 52, 324158D, 29574, G01R 3126, G01R 104, H01L 700

Patent

active

045815763

ABSTRACT:
A method is disclosed for nondestructively profiling the uniformity of imperfection level densities in a semiconductor wafer. Resistance profiles from the wafer are obtained using an opaque spot filter and an optical filter. The difference between the resistance profiles is proportional to the density fluctuations of imperfections in the wafer material. By comparing the resistance profiles obtained using the opaque spot filter, and the optical filter an optically assisted imperfection profile (OAIP) of the imperfections in the wafer material is obtained.

REFERENCES:
patent: 4287473 (1981-09-01), Sawyer
patent: 4301409 (1981-11-01), Miller
patent: 4442402 (1984-04-01), Besomi
patent: 4456879 (1984-06-01), Kleinknecht
patent: 4473795 (1984-09-01), Wood
Blunt et al.; "Dislocation Density and Sheet Resistance Variations . . . " IEEE Trans. on Electron Devices-Jul. 1982, pp. 1039-1044.

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