Nondestructive method for detecting defects in photodetector and

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324158D, G01R 3126

Patent

active

042874734

ABSTRACT:
The invention described herein is a method for locating semiconductor device defects and for measuring the internal resistance of such devices by making use of the intrinsic distributed resistance nature of the devices. The method provides for forward-biasing a solar cell or other device while it is scanning with an optical spot. The forward-biasing is achieved with either an illuminator light source or an external current source.

REFERENCES:
patent: 4051437 (1977-09-01), Lile et al.

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