Nondestructive characterization of thin films based on...

Radiant energy – Electron energy analysis

Reexamination Certificate

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C250S307000, C250S306000, C378S050000

Reexamination Certificate

active

06891158

ABSTRACT:
The present invention provides for characterization of a film (e.g., thickness determination for a silicon oxynitride film) using collected spectral data. For example, an acquired spectrum may be cumulatively integrated and the geometric properties of the integrated spectrum may be used to determine component concentration information. Thickness measurements for the film may be provided based on the component concentration information.

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