Nonalloyed ohmic contacts for n type gallium arsenide

Details Nonalloyed ohmic contacts for n type gallium arsenide Nonalloyed ohmic contacts for n type gallium arsenide

1988-01-27

1989-05-23

Roy, Upendra

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

148DIG140, 148DIG139, 428620, 437 39, 437176, 437177, H01L 2348, H01L 21265

Patent

active

048330426

ABSTRACT:
The invention is a layered nonalloyed ohmic contact structure for use on n type gallium arsenide including a layer of germanium or silicon of the order of 10 .ANG. thick evaporated onto the gallium arsenide; a diffusion barrier layer of material 100-200 .ANG. thick over the germanium or silicon selected from non-metallic conducting compounds, including metal compounds of

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