Non-volatile storage with boosting using channel isolation...

Details Non-volatile storage with boosting using channel isolation... Non-volatile storage with boosting using channel isolation...

2007-05-07

2008-12-09

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185020, C365S185180, C365S185230, C365S185280

Reexamination Certificate

active

07463522

ABSTRACT:
Non-volatile storage in which program disturb is reduced by preventing source side boosting in selected NAND strings. A self-boosting mode which includes an isolation word line is used. A channel area of an inhibited NAND string is boosted on a source side of the isolation word line before the channel is boosted on a drain side of the isolation word line. Further, storage elements near the isolation word line are kept in a conducting state during the source side boosting so that the source side channel is connected to the drain side channel. In this way, in selected NAND strings, source side boosting can not occur and thus program disturb due to source side boosting can be prevented. After the source side boosting, the source side channel is isolated from the drain side channel, and drain side boosting is performed.

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