Static information storage and retrieval – Floating gate – Particular connection
Patent
1998-06-18
2000-04-18
Nelms, David
Static information storage and retrieval
Floating gate
Particular connection
365150, 36518526, 36518533, G11C 1400
Patent
active
060523042
ABSTRACT:
Disclosed is a non-volatile storage element that is defined between a bitline and a complementary bitline, and that can be accessed by a selected wordline is disclosed. The non-volatile storage element includes a high voltage latch that is configured to receive a pump voltage, and a reference voltage that is about half of the pump voltage. The non-volatile storage element also includes a storage cell that is configured to receive a logical programming value from the bitline and the complementary bit line when the wordline is driven high to turn on a first passgate and a second passgate. The storage cell further includes a capacitive transistor having its back gate, source and drain connected to a first terminal of the first passgate, and a tunneling transistor having its back gate, source and drain connected to a second terminal of the second passgate. The capacitive transistor and the tunneling transistor are configured to share a floating gate. When one or more of the above described non-volatile storage elements are defined in a custom application specific integrated circuit (ASIC) having a multiplicity of transistors, each of the transistors in the storage element may be formed using about the same fabrication process operations as used to fabricate the multiplicity of transistors of the ASIC.
REFERENCES:
patent: 4326134 (1982-04-01), Owen et al.
patent: 5587951 (1996-12-01), Jazayeri et al.
patent: 5768208 (1998-06-01), Bruwer et al.
patent: 5812463 (1998-09-01), Park
patent: 5864499 (1999-01-01), Roohparvar et al.
Auduong Gene N.
LSI Logic Corporation
Nelms David
LandOfFree
Non-volatile storage element and method for manufacturing using does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile storage element and method for manufacturing using , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile storage element and method for manufacturing using will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2341568