Static information storage and retrieval – Floating gate – Particular connection
Patent
1998-08-20
2000-02-15
Nguyen, Viet Q.
Static information storage and retrieval
Floating gate
Particular connection
36518502, 36518501, G11C 1134
Patent
active
060260181
ABSTRACT:
The invention relates to a non-volatile, static random access memory (nvSRAM) device that addresses the consequence of a manufacturing defect that occasionally occurs during mass production of the nvSRAM device and if not addressed, reduces the yield of the production process. The consequence of the defect is termed a store disturb because the execution of a store operation in a defective nvSRAM causes the bit of data retained in the SRAM portion and, in some cases, the nv portion of the nvSRAM to be instable or corrupted. The present invention provides an nvSRAM device in which the controller provides modified signals to the nvSRAM memory portion of the device that address the store disturb phenomena and, as a consequence, improve the yield of the manufacturing process.
REFERENCES:
patent: 4510584 (1985-04-01), Dias et al.
patent: 5065362 (1991-11-01), Herdt et al.
patent: 5563839 (1996-10-01), Herdt et al.
patent: 5602776 (1997-02-01), Herdt et al.
patent: 5799200 (1998-08-01), Brant et al.
patent: 5828599 (1998-10-01), Herdt
patent: 5847577 (1998-12-01), Trimberger
Dietrich Daryl G.
Gill John R.
Herdt Christian E.
Ruths Paul F.
Nguyen Viet Q.
Simtek Corporation
LandOfFree
Non-volatile, static random access memory with store disturb imm does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile, static random access memory with store disturb imm, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile, static random access memory with store disturb imm will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1911122