Non-Volatile, static random access memory with current limiting

Static information storage and retrieval – Floating gate – Particular connection

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36518505, 365154, G11C 1134

Patent

active

056027761

ABSTRACT:
The present invention provides a non-volatile, static random access memory (nvSRAM) cell with a current limiting feature that prevents current that is provided to the cell or array of cells during a recall operation in which information is transferred from the non-volatile portion of the cell or array to the static random access memory portion of the cell or array from reaching a point that would be detrimental to the cell or array. The current limiting device is located between the nvSRAM cell or array of cells and ground. In one embodiment, the current limiting device includes a variable resistance and a device for modulating the resistance so that the resistance is high at the beginning of a recall operation and decreases thereafter.

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