Non-volatile SRAM cell having split-gate transistors

Details Non-volatile SRAM cell having split-gate transistors Non-volatile SRAM cell having split-gate transistors

2006-05-30

2006-05-30

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S154000, C365S185220, C365S185260, C365S185290

Reexamination Certificate

active

07054194

ABSTRACT:
This specification discloses a non-volatile static random access memory (SRAM) cell with the feature of keeping data even after the power is turned off. It includes a static random access unit and a non-volatile memory unit. Therefore, it has the random access property of the SRAM normally. After the power is turned off, it can store data in the non-volatile memory unit, so that the data can be automatically restored to the static random access unit from the non-volatile memory unit when the power is turned on.

REFERENCES:
patent: 5892712 (1999-04-01), Hirose et al.
patent: 6097329 (2000-08-01), Wakayama
patent: 6222765 (2001-04-01), Nojima
patent: 6285575 (2001-09-01), Miwa
patent: 6556487 (2003-04-01), Ratnakumar et al.

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