Non-volatile sidewall memory cell method of fabricating same

Details Non-volatile sidewall memory cell method of fabricating same Non-volatile sidewall memory cell method of fabricating same

1994-06-17

1995-07-11

Popek, Joseph A.

Static information storage and retrieval

Floating gate

Particular biasing

365 94, 365104, 257302, 437 52, G11C 1140, H01L 2968

Patent

active

054327393

ABSTRACT:
A non-volatile memory cell and array of such cells is provided. The memory cell includes a single transistor floating gate cell fabricated on a sidewall of a silicon pillar etched into a silicon substrate. The memory cells are arranged in an array of rows extending in a bit line direction and columns extending in a word line direction. A substantially smaller cell and array size is realized by limiting the dimension of the pillar and the bit line in the word line direction to be the minimum line width as limited by the lithography.

REFERENCES:
patent: 4974060 (1990-11-01), Ogasawara
patent: 5011526 (1991-03-01), Gotou
patent: 5017977 (1991-05-01), Richardson

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