Static information storage and retrieval – Read only systems – Fusible
Reexamination Certificate
2008-02-15
2009-10-06
Mai, Son L (Department: 2827)
Static information storage and retrieval
Read only systems
Fusible
C365S201000, C365S225700
Reexamination Certificate
active
07599206
ABSTRACT:
A non-volatile semiconductor storage device includes: one or more memory cells including anti-fuse elements capable of writing data by breaking down a gate insulation film of a MOS transistor with a high voltage; a sense node having its one end connected to each of the anti-fuse elements; a sense amplifier comparing the potential of the sense node with the reference potential and amplifying the difference therebetween, the sense amplifier being activated according to a sense-amplifier activation signal; an initialization circuit initializing the potential of the sense node according to an initialization signal; a control circuit outputting the initialization signal at a predetermined timing after input of an external signal input from the outside and outputting a first activation signal to activate the sense amplifier at a predetermined timing after input of the external signal; and a switching circuit outputting the first activation signal as the sense-amplifier activation signal when a normal data read operation is performed, and outputting an inverted version of the external signal as the sense-amplifier activation signal when a test execution is instructed for the one or more memory cells before the gate insulation film is broken down.
REFERENCES:
patent: 2006/0092742 (2006-05-01), Paillet et al.
patent: 2007/0103224 (2007-05-01), Namekawa et al.
patent: 2008/0080295 (2008-04-01), Namekawa et al.
patent: 2005-302091 (2005-10-01), None
Ito Hiroshi
Nakano Hiroaki
Nakayama Atsushi
Namekawa Toshimasa
Wada Osamu
Kabushiki Kaisha Toshiba
Mai Son L
Turocy & Watson LLP
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