Non-volatile semiconductor storage device

Details Non-volatile semiconductor storage device Non-volatile semiconductor storage device

2011-03-22

2011-03-22

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185050, C365S185110, C365S185120, C365S185060, C365S185180, C365S185230, C365S185270, C365S185330, C365S182000, C365S189140, C365S230020, C365S230060

Reexamination Certificate

active

07911844

ABSTRACT:
A non-volatile semiconductor storage device includes: a memory cell array having memory cells arranged therein, the memory cells storing data in a non-volatile manner; and a plurality of transfer transistors transferring a voltage to the memory cells, the voltage to be supplied for data read, write and erase operations with respect to the memory cells. Each of the transfer transistors includes: a gate electrode formed on a semiconductor substrate via a gate insulation film; and diffusion layers formed to sandwich the gate electrode therebetween and functioning as drain/source layers. Upper layer wirings are provided above the diffusion layers and provided with a predetermined voltage to prevent depletion of the diffusion layers at least when the transfer transistors become conductive.

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